High-power operation of InP/InGaAsP double-channel planar buried-heterostructure lasers with asymmetric facet coatings
We report the high-power operation of lambda = 1.3 ..mu..m InGaAsP double-channel planar buried-heterostructure lasers with asymmetric mirror coatings. A stack of four dielectric layers is used to raise the reflectivity of one facet to over 80%, and the thickness of a single layer coating on the output facet is chosen to reduce the reflectivity to about 4%. The resulting lasers are characterized by a low threshold current of 25 mA, slope efficiency as high as 50%, and a power output of as much as 150 mW (at 5 /sup 0/C) at a current of less than 300 mA. The lasers operate in a single transverse mode over the entire current range and as much as 45 mW of power could be coupled into a lensed single-mode fiber. Preliminary high-power aging data show excellent device reliability.
- Research Organization:
- AT and T Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 5843811
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:26; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
AGING
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COUPLING
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
FABRICATION
FIBERS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASERS
LAYERS
OPERATION
OPTICAL FIBERS
PERFORMANCE
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT