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Annealing environment effects in solid-phase epitaxial regrowth of Fe-implanted Al/sub 2/O/sub 3/

Conference ·
OSTI ID:5841133
Samples of c-axis Al/sub 2/O/sub 3/ were implanted with Fe(160 keV,4 /times/ 10/sup 16//cm/sup 2/) at liquid nitrogen temperature and then thermally annealed at temperatures of 900,960 and 1100/degree/C in an oxidising environment (flowing O/sub 2/) or in a reducing environment (flowing 96% Ar, 4% H). Rutherford backscattering spectrometry, ion channeling, and transmission electron microscopy of the crystals revealed differences in the annealing characteristics of the implanted layers that depended on the annealing environment. These results indicate the importance of the annealing atmosphere in determining the characteristics of epitaxially regrown layers in ion-implanted and thermally annealed Al/sub 2/O/sub 3/. 15 refs., 5 figs.
Research Organization:
Oak Ridge National Lab., TN (USA)
DOE Contract Number:
AC05-84OR21400
OSTI ID:
5841133
Report Number(s):
CONF-8906155-5; ON: DE89016843
Country of Publication:
United States
Language:
English