Annealing environment effects in solid-phase epitaxial regrowth of Fe-implanted Al/sub 2/O/sub 3/
Conference
·
OSTI ID:5841133
Samples of c-axis Al/sub 2/O/sub 3/ were implanted with Fe(160 keV,4 /times/ 10/sup 16//cm/sup 2/) at liquid nitrogen temperature and then thermally annealed at temperatures of 900,960 and 1100/degree/C in an oxidising environment (flowing O/sub 2/) or in a reducing environment (flowing 96% Ar, 4% H). Rutherford backscattering spectrometry, ion channeling, and transmission electron microscopy of the crystals revealed differences in the annealing characteristics of the implanted layers that depended on the annealing environment. These results indicate the importance of the annealing atmosphere in determining the characteristics of epitaxially regrown layers in ion-implanted and thermally annealed Al/sub 2/O/sub 3/. 15 refs., 5 figs.
- Research Organization:
- Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 5841133
- Report Number(s):
- CONF-8906155-5; ON: DE89016843
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CHANNELING
CHARGED PARTICLES
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ION CHANNELING
ION IMPLANTATION
IONS
IRON IONS
MICROSCOPY
OXIDES
OXYGEN COMPOUNDS
RUTHERFORD SCATTERING
SCATTERING
TRANSMISSION ELECTRON MICROSCOPY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CHANNELING
CHARGED PARTICLES
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ION CHANNELING
ION IMPLANTATION
IONS
IRON IONS
MICROSCOPY
OXIDES
OXYGEN COMPOUNDS
RUTHERFORD SCATTERING
SCATTERING
TRANSMISSION ELECTRON MICROSCOPY