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U.S. Department of Energy
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Thin-film polycrystalline silicon solar cells. Quarterly report No. 2, December 11, 1978-March 10, 1979

Technical Report ·
DOI:https://doi.org/10.2172/5840257· OSTI ID:5840257
In the second quarter, 40 solar cells were fabricated on Wacker substrates. One series of cells was used to compare the effect on AM-1 parameters of making the cells from the center region or the edge region of the original 10 x 10-cm wafer. Another series tested the effect of varying the junction diffusion temperatue from 850 to 900/sup 0/C. In both cases the differences were not large, except for diffused junctions at 850/sup 0/C. Passivation of grain boundaries by heating in a plasma discharge containing atomic hydrogen was attempted on a number of cells. With one ion-implanted cell, which was poor to begin with, a 21% improvement in efficiency was obtained. However, on a number of other more efficient cells, there was no significant improvement. A variety of experimental techniques for studying polycrystalline silicon and the effects of grain boundaries were implemented this quarter. They include measurement of minority carrier lifetime, QE curves with and without bias light, QE measurements using a 150-..mu..m spot, within a grain and including a grain boundary, laser scans across grain boundaries, and deep-level spectroscopy by transient capacitance. These measurements allowed us to assess the effects of grain boundaries on solar-cell performance. The surface topography of etched and polished cells was studied by SEM. An SEM method of determining the crystallographic orientation of small grains, called electron channeling patterns (ECP), was developed.The phosphorus diffusion profiles in Wacker material inside a grain and including a grain boundary were measured by SIMS. The presence of small black inclusions in Wacker material was observed.
Research Organization:
RCA Labs., Princeton, NJ (USA)
OSTI ID:
5840257
Report Number(s):
SAN-1876-2
Country of Publication:
United States
Language:
English