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U.S. Department of Energy
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Thin-film polycrystalline silicon solar cells. Quarterly report No. 1, September 11-December 10, 1978

Technical Report ·
DOI:https://doi.org/10.2172/5199769· OSTI ID:5199769
A total of 16 solar cells was fabricated in the first quarter. Half of these had diffused junctions and half had ion-implanted junctions. In each group of eight, six were made on Wacker Silso polycrystalline substrates and two on control single-crystal wafers. The solar-cell parameters were measured for all cells. The efficiencies of the control wafers were as high as 12.7% with antireflection (AR) coating, whereas the highest efficiency of a cell made on Wacker material was 11.1% for a diffused-junction cell. The ion-implanted cells made with the Wacker material had systematically lower efficiencies, 5.9% versus 7.4% for diffused-junction cells without AR coating. Quantum efficiency versus wavelength was measured on all cells, and these curves were fit to a simple model solar cell. From this fit the minority carrier diffusion length in the base was obtained. A laser scanning apparatus was built which has a 4.5-..mu..m spot size. The solar cell under test is mechanically scanned across this focused laser spot. Laser scans were obtained over a 5 x 6-mm area on two solar cells. Comparison of the laser scan map with a photograph of the same region shows the same geometrical pattern of grain boundary lines. However, in the laser scan map, some of the grain boundaries are missing.
Research Organization:
RCA Labs., Princeton, NJ (USA)
OSTI ID:
5199769
Report Number(s):
SAN-1876-1
Country of Publication:
United States
Language:
English