Transform-limited picosecond optical pulses from a mode-locked InGaAs/AlGaAs QW laser with integrated passive waveguide cavity and QW modulator

Journal Article · Sun Aug 01 00:00:00 EDT 1993 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/68.238246· OSTI ID:5833495

Brovelli, L R; Melchior, H ^[1]; Germann, R; Jaeckel, H; Meier, H P ^[2]; Reithmaier, J P ^[3]

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1. Institute of Quantum Electronics, Zurich (Switzerland)
2. Zurich Research Lab., Rueschlikon (Switzerland)
3. Univ. Wuerzburg, Wuerzburg (Germany)

Using a novel single-step molecular beam epitaxy growth technology on nonplanar substrates, the authors report on the successful integration of an InGaAs/AlGaAs laser amplifier with a 4-mm-long passive waveguide cavity and a QW modulator. Lasing action of the entire structure was achieved by a current of 60 mA flowing through the amplifier section Modelocking experiments applying an RF signal to the modulator segment led to nearly transform-limited pulses with duration of 4.4 ps and a time-bandwidth product of 0.43.

• OSTI ID: 5833495
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States) Vol. 5:8; ISSN 1041-1135; ISSN IPTLEL
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC PULSES
ELECTROMAGNETIC RADIATION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASER CAVITIES
LASERS
MODE LOCKING
PNICTIDES
PULSES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
WAVEGUIDES