Reduced radiative currents from GaAs/InGaAs and AlGaAs/GaAs p-i-n quantum well devices
- Imperial Coll., London (United Kingdom); and others
Calibrated electroluminescence spectra of GaAs/InGaAs and AlGaAs/GaAs single and double quantum well (QW) p-i-n devices, at various temperatures (200--300K) and biases (0.8--1.5V), have been compared to theory to extract the quasi-Fermi level separation, {Delta}{phi}{sub f}, in the QWs and where possible in the host material. Emission from the host material for the GaAs/InGaAs cell is well fitted with {Delta}{phi}{sub f} = V{sub app} at all biases and temperatures. In contrast, emission from the QW in both GaAs/InGaAs and AlGaAs/GaAs cases requires a value of {Delta}{phi}{sub f} which is a few tens of MeV less than V{sub app}. The authors attribute the variations in {Delta}{phi}{sub f} to irreversible thermally assisted escape from the QWs and detail some preliminary results from double QW samples.
- OSTI ID:
- 304406
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
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