Physical mechanisms contributing to device ''REBOUND''

Journal Article · Sat Dec 01 00:00:00 EST 1984 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1984.4333525· OSTI ID:5832805

Schwank, J R; Dressendorfer, P V; McWhorter, P J; Sexton, F W; Turpin, D C; Winokur, P S

The physical mechanisms that produce rebound have been identified. The positive increase in threshold voltage during a bias anneal is due to annealing of oxide trapped charge. Rebound can be predicted by measuring the contribution to the threshold voltage from radiation-induced interface states immediately after irradiation.

• Research Organization: Sandia National Laboratories, Division 2144, Albuquerque, New Mexico 87185
• OSTI ID: 5832805
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. NS-31:6
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
SEMICONDUCTOR DEVICES
PHYSICAL RADIATION EFFECTS
ANNEALING
ELECTRIC CHARGES
ELECTRIC POTENTIAL
INTERFACES
OXIDES
POST-IRRADIATION EXAMINATION
TRAPPING
CHALCOGENIDES
HEAT TREATMENTS
OXYGEN COMPOUNDS
RADIATION EFFECTS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems