Random telegraph signals in small MOSFET's after x-ray irradiation

Conference · Sun Dec 01 04:00:00 EST 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:5832701

Muto, H ^[1]; Tsai, M H; Ma, T P ^[2]

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1. Mitsubishi Electric Corp., Manufacturing Development Lab. (JP)
2. Yale Univ., Dept. of Electrical Engineering, New Haven, CT (US)

The Random Telegraph Signals (RTS's) in small MOSFET's before and after x-ray irradiation and after annealing have been studied. It is believed that the RTS's arise from the trapping/detrapping of individual defect(s) near the SiO{sub 2}/Si interface, and they are expected to be altered by ionizing radiation and annealing processes. This paper reports that the key results from this study are: RTS's existed prior to x-ray irradiation in both weak inversion and strong inversion due to process-induced defects, x-ray irradiation causes the disappearance of the original RTS and the appearance of new RTS with different emission time constants, x-ray irradiation also causes high frequency current fluctuations with much more irregular amplitude distribution than the slower RTS's, annealing at 200-300{degrees} C in nitrogen removes most of the high frequency component and reveals more clearly some of the radiation-induced RTS's, and annealing at 400{degrees} C essentially removes all of the radiation-induced RTS's, but causes the reappearance of one set of the original RTS traces in strong inversion. Several possibilities are discussed to account for the observations.

• OSTI ID: 5832701
• Report Number(s): CONF-910751--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 38:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMPLITUDES
ANNEALING
CHALCOGENIDES
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELEMENTS
FIELD EFFECT TRANSISTORS
FLUCTUATIONS
HEAT TREATMENTS
IONIZING RADIATIONS
MINERALS
MOS TRANSISTORS
MOSFET
NITROGEN
NONMETALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMIMETALS
SIGNALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TEMPERATURE RANGE
TEMPERATURE RANGE 0400-1000 K
TRANSISTORS
TRAPS
VARIATIONS
X RADIATION