Further measurements of random telegraph signals in proton irradiated CCDs

Journal Article · Fri Dec 01 04:00:00 EST 1995 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.489255· OSTI ID:203733

Hopkins, I H ^[1]; Hopkinson, G R ^[2]

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1. SIRA/UCL Postgraduate Centre, Kent (United Kingdom)
2. Sira Ltd., Kent (United Kingdom)

The probability/incident proton for creation of a defect in a charge-coupled device (CCD) which shows dark current random telegraph signal (RTS) behavior has been measured for energies of 1.5, 10 and 46 MeV. The probability was found to be proportional to the non-ionizing energy loss (NIEL) for elastic collisions. Plots of RTS probability versus mean dark current indicate a correlation with the amount of field enhanced emission. If a pixel already has a defect showing field enhanced emission, it is more likely to show RTS effects. The amplitudes themselves are not correlated with the degree of field enhanced emission. An alternative to the bulk metastable defect model is proposed, based on the reorientation of the phosphorus-vacancy center in a high electric field.

• OSTI ID: 203733
• Report Number(s): CONF-950716--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 42; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CHARGE-COUPLED DEVICES
ELECTRIC CURRENTS
MATHEMATICAL MODELS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SIGNAL-TO-NOISE RATIO