Spectrum of anomalous random telegraph noise
- Radiation Laboratory, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
The alternate capture and emission of electrons at an individual defect site generates discrete switching in resistance, referred to as a random telegraph signal (RTS). Recent experiments indicate that some defects might have two mutually exclusive emission modes with distinct emission rates, which result in the anomalous RTS: a rapid-switching RTS modulated in time by a slow-switching RTS of the same amplitude. The spectrum is calculated of the anomalous RTS by assuming that the emission mode for a captured electron is determined at the moment of capture of the electron, and the probability for a given mode is a constant [ital p] in each event of capturing. It is shown that a distribution in [ital p] might lead to a 1/[ital f] spectrum.
- OSTI ID:
- 5797559
- Journal Information:
- Journal of Applied Physics; (United States), Vol. 74:12; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Temperature-independent switching rates for a random telegraph signal in a silicon metal-oxide-semiconductor field-effect transistor at low temperatures
Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis
Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
MIM JUNCTIONS
NOISE
SPECTRA
DEFECTS
ELECTRIC CONDUCTIVITY
ELECTRON CAPTURE
ELECTRON EMISSION
SEMICONDUCTOR DEVICES
TRAPPING
CAPTURE
ELECTRICAL PROPERTIES
EMISSION
JUNCTIONS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
665000* - Physics of Condensed Matter- (1992-)