SEU hardened memory cells for a CCSDS Reed Solomon encoder
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5832622
- NASA Space Engineering Research Center for VLSI System Design, Univ. of Idaho, Moscow, ID (US)
This paper reports on design technique to harden CMOS memory circuits against Single Event Upset (SEU) in the space environment. The design technique provides a recovery mechanism which is independent of the shape of the upsetting event. A RAM cell and Flip Flop design are presented to demonstrate the method. The Flip Flop was used in the control circuitry for a Reed Solomon encoder designed for the Space Station and Explorer platforms.
- Sponsoring Organization:
- NASA; National Aeronautics and Space Administration, Washington, DC (United States)
- OSTI ID:
- 5832622
- Report Number(s):
- CONF-910751--; CNN: NAGW-1406
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:6; ISSN 0018-9499; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CONTROL
DESIGN
ELECTRONIC CIRCUITS
FLIP-FLOP CIRCUITS
HARDENING
MEMORY DEVICES
MOS TRANSISTORS
MULTIVIBRATORS
PHYSICAL RADIATION EFFECTS
PULSE CIRCUITS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SPACE FLIGHT
TRANSISTORS
VARIATIONS
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CONTROL
DESIGN
ELECTRONIC CIRCUITS
FLIP-FLOP CIRCUITS
HARDENING
MEMORY DEVICES
MOS TRANSISTORS
MULTIVIBRATORS
PHYSICAL RADIATION EFFECTS
PULSE CIRCUITS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SPACE FLIGHT
TRANSISTORS
VARIATIONS