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SEU hardened memory cells for a CCSDS Reed Solomon encoder

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5832622
; ;  [1]
  1. NASA Space Engineering Research Center for VLSI System Design, Univ. of Idaho, Moscow, ID (US)

This paper reports on design technique to harden CMOS memory circuits against Single Event Upset (SEU) in the space environment. The design technique provides a recovery mechanism which is independent of the shape of the upsetting event. A RAM cell and Flip Flop design are presented to demonstrate the method. The Flip Flop was used in the control circuitry for a Reed Solomon encoder designed for the Space Station and Explorer platforms.

Sponsoring Organization:
NASA; National Aeronautics and Space Administration, Washington, DC (United States)
OSTI ID:
5832622
Report Number(s):
CONF-910751--; CNN: NAGW-1406
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:6; ISSN 0018-9499; ISSN IETNA
Country of Publication:
United States
Language:
English