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An SEU-hardened CMOS data latch design

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6065443

A Single Event Upset (SEU)-hardened Complementary Metal-Oxide Semiconductor (CMOS) data latch design is described. The hardness is achieved by virtue of the latch design, thus no fabrication process or design groundrule development is required. Hardness is gained with comparatively little adverse impact on performance. Cyclotron tests provided hardness verification.

Research Organization:
IBM Corp., Systems Integration Div., Manassas, VA (US)
OSTI ID:
6065443
Report Number(s):
CONF-880730-
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:6; ISSN IETNA
Country of Publication:
United States
Language:
English