Transient radiation hardness of the CMOSV 1. 25 micron technology
Conference
·
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
- Sandia National Labs., Albuquerque, NM (United States)
Several devices fabricated in the AT and T/Sandia CMOSV 1.25 {mu}m technology have been characterized for transient radiation hardness. Dose rates upset levels exceeding 10{sup 9} rad (Si)/s were obtained on 16-bit microprocessor, 64K SRAM and 256K SRAM ICs. In this paper experimental data on neutron irradiated parts is given. Secondary photocurrents are shown to exist in logic structures which do not have adequate p-well contact placement. Layout guidelines are developed which allow the IC designer to eliminate secondary photocurrents in a given design.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5826020
- Report Number(s):
- CONF-910751--
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:6; ISSN 0018-9499; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BARYON REACTIONS
COMPUTERS
DESIGN
DOSE RATES
ELECTRICAL TRANSIENTS
ELECTRONIC CIRCUITS
EMISSION
FABRICATION
HADRON REACTIONS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
NEUTRON REACTIONS
NUCLEAR REACTIONS
NUCLEON REACTIONS
PHOTOEMISSION
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
REGULATIONS
SECONDARY EMISSION
TEMPERATURE RANGE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TRANSIENTS
VARIATIONS
VOLTAGE DROP
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BARYON REACTIONS
COMPUTERS
DESIGN
DOSE RATES
ELECTRICAL TRANSIENTS
ELECTRONIC CIRCUITS
EMISSION
FABRICATION
HADRON REACTIONS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
NEUTRON REACTIONS
NUCLEAR REACTIONS
NUCLEON REACTIONS
PHOTOEMISSION
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
REGULATIONS
SECONDARY EMISSION
TEMPERATURE RANGE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TRANSIENTS
VARIATIONS
VOLTAGE DROP