Effect of impurities on absorption in semiconductors and on generation by semiconductor lasers
Journal Article
·
· Sov. Phys. - JETP (Engl. Transl.); (United States)
OSTI ID:5824329
The effect of impurity scattering of electrons on the operation of semiconductor lasers and on absorption in semiconductors is considered. It is shown that the limiting field of a neodymium laser is increased by (tau/sub ph//tau/sub im/)/sup 1//sup ///sup 2/ times (tau/sub ph/ and tau/sub im/ are the times of electron scattering by phonons and impurities) compared with pure lasers, and that under certain conditions the dependence of the field on the pump current has a maximum. Combined scattering leads to a broadening approx.(1tau/sub im/tau/sub ph/)/sup 1//sup ///sup 2/ of the absorption curve. It is found that impurity scattering alone does not broaden the absorption line.
- Research Organization:
- Moscow Engineering-Physics Institute
- OSTI ID:
- 5824329
- Journal Information:
- Sov. Phys. - JETP (Engl. Transl.); (United States), Journal Name: Sov. Phys. - JETP (Engl. Transl.); (United States) Vol. 60:1; ISSN SPHJA
- Country of Publication:
- United States
- Language:
- English
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