Optimization of exponential alloying impurity distribution in semiconductor photoconverter base

Journal Article · Sun Jan 01 04:00:00 EST 1978 · Appl. Solar Energy (USSR) (Engl. Transl.); (United States)

OSTI ID:5718530

Evdokimov, V M; Lisovskii, Yu D

The influence on carrier collection of a uniform built-in electric field created by exponential impurity distribution in the base of a photocell of finite thickness with account for the fact that carrier mobility ..mu.. and lifetime tau depend exponentially on the impurity concentration ..mu.. approx. N/sup ..nu../; tau approx. N/sup -xi/ is examined. The magnitude of the optimal field is found, and its dependence on both the semiconductor parameters and the incident light wavelength is studied. The optimal base layer thickness is selected.

• Research Organization: All-Union Order of Red Banner of Labor, Moscow, USSR
• OSTI ID: 5718530
• Journal Information: Appl. Solar Energy (USSR) (Engl. Transl.); (United States), Journal Name: Appl. Solar Energy (USSR) (Engl. Transl.); (United States) Vol. 14:4; ISSN ASOEA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CARRIER LIFETIME
CARRIER MOBILITY
CHARGE COLLECTION
DIFFUSION LENGTH
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC FIELDS
IMPURITIES
LIFETIME
MATHEMATICAL MODELS
MOBILITY
OPTIMIZATION
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SOLAR CELLS
SPECTRAL RESPONSE