Saturation effects in semiconductor lasers

Journal Article · Sat Aug 01 04:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073517· OSTI ID:6131136

Chow, W W; Dente, G C; Depatie, D

This paper describes a theory for a semiconductor active medium interacting with a laser field. In a semiconductor laser, the charge carrier transitions are inhomogeneously broadened, and electron-electron and electron-phonon collisions tend to dephase the laser transitions and maintain thermal equilibrium among the carriers. These properties cause semiconductor lasers to frequency tune as though they are inhomogeneously broadened and to saturate as though they are homogeneously broadened. A theory that contains these two aspects of semiconductor laser behavior is presented. From it, the authors are able to calculate the loaded gain, efficiency, intensity, and carrier-induced refractive index of a semiconductor active medium.

• Research Organization: Hughes Aircraft Co., Albuquerque, NM 87106
• OSTI ID: 6131136
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:8; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
CHARGE CARRIERS
COLLISIONS
EFFICIENCY
ELECTROMAGNETIC RADIATION
ELECTRON COLLISIONS
ELECTRON-ELECTRON COLLISIONS
ELECTRON-PHONON COUPLING
EQUILIBRIUM
FREQUENCY SELECTION
GAIN
LASER RADIATION
LASERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
RADIATIONS
REFRACTIVITY
SATURATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THERMAL EQUILIBRIUM
TUNING