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Glancing angle x-ray study of the effect of oxygen on interface reactions in Al/Ni bilayers

Journal Article · · Journal of Materials Research; (USA)
;  [1]
  1. Applied Physics Division, Brookhaven National Laboratory, Upton, New York 11973 (US)
Glancing angle x-ray reflectivity and EXAFS measurements have been made on a series of UHV prepared Al/Ni bilayers with varying amounts of oxygen impurities. These samples show an intrinsic reacted region prior to annealing, and for clean samples further reaction occurs at 250 {degree}C. Oxygen is found to influence strongly the course of the reaction with an effect which depends on its location. A few percent O impurity within the Al film strongly suppresses the grain boundary diffusion path, which allows the growth of a smooth NiAl{sub 3} layer. Interfacial O exposures of 60 and 600 Langmuir both inhibit the initial reaction and raise the temperature at which further reaction occurs to as much as 300 {degree}C with an effect which depends on exposure. The thickness of the intrinsic reaction zone is about 60 A for clean samples, and is nearly eliminated for contaminated interfaces. The results indicate that surface/interface, grain boundary, and bulk diffusion all play important roles in the formation of these interfaces, and that each of these is influenced by O impurities.
DOE Contract Number:
AC02-76CH00016; AS05-80ER10742
OSTI ID:
5812631
Journal Information:
Journal of Materials Research; (USA), Journal Name: Journal of Materials Research; (USA) Vol. 6:5; ISSN JMREE; ISSN 0884-2914
Country of Publication:
United States
Language:
English