Indium--tin oxide films radio frequency sputtered from specially formulated high density indium--tin oxide targets

Journal Article · Wed May 01 00:00:00 EDT 1991 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)

DOI:https://doi.org/10.1116/1.577601· OSTI ID:5810934

Kulkarni, S; Bayard, M ^[1]

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1. Tektronix, Inc., 46-777, Beaverton, Oregon 97077 (US)

High density ITO (indium--tin oxide) targets doped with Al{sub 2}O{sub 3} and SiO{sub 2} manufactured in the Tektronix Ceramics Division have been used to rf sputter ITO films of various thicknesses on borosilicate glass substrates. Sputtering in an oxygen--argon gas mixture and annealing in forming gas, resulted in ITO films exhibiting 90% transmission at 550 nm and a sheet resistance of 15 {Omega}/sq for a thickness of 1100 A. Sputtering in an oxygen--argon gas mixture and annealing in air increased sheet resistance without a large effect on the transmission. Films sputtered in argon gas alone were transparent in the visible and the sheet resistance was found to be 100--180 {Omega}/sq for the same thickness, without annealing.

• OSTI ID: 5810934
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 9:3; ISSN 0734-2101; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360204* -- Ceramics
Cermets
& Refractories-- Physical Properties
ANNEALING
CHALCOGENIDES
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FILMS
HEAT TREATMENTS
INDIUM COMPOUNDS
INDIUM OXIDES
LIGHT TRANSMISSION
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SPUTTERING
THIN FILMS
TIN COMPOUNDS
TIN OXIDES