Gallium nitride thick layers: Epitaxial growth and separation from substrates
- A.F. Ioffe Physical-Technical Inst., St. Petersburg (Russian Federation)
The authors investigated the possibilities of vapor phase epitaxy in an open tube chloride system for thick GaN film deposition on sapphire substrates. The methods of the buffer layer deposition were proposed and developed. The methods of fast (up to 100 microns/hour) was developed. Parameters of good quality gallium nitride epitaxy were obtained. To determine the quality of fast grown epitaxial layers they used X-ray diffraction and photoluminescence measurements. The halfwidth of the rocking curve for the best samples was equal to /4--6 minutes. Luminescence spectrum (T = 77K) had a maximum near 3.46 eV. A signal in the visible wavelength range was hardly observed. Polished layers were transparent. A special initial treatment of the substrates allowed them to separate thick (up to 300 micron) epitaxial gallium nitride layers from sapphire. It was shown that it is possible to use separated films for homoepitaxy of GaN.
- OSTI ID:
- 581044
- Report Number(s):
- CONF-961202-; ISBN 1-55899-353-3; TRN: IM9807%%148
- Resource Relation:
- Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of III-V nitrides; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Moustakas, T.D. [ed.] [Boston Univ., MA (United States)]; Akasaki, I. [ed.] [Meijo Univ., Nagoya (Japan)]; Monemar, B.A. [ed.] [Linkoeping Univ. (Sweden)]; PB: 1278 p.; Materials Research Society symposium proceedings, Volume 449
- Country of Publication:
- United States
- Language:
- English
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