Optical properties of bulk gallium nitride single crystals grown by chloride–hydride vapor-phase epitaxy

Journal Article · Fri Dec 15 04:00:00 EST 2017 · Physics of the Solid State

DOI:https://doi.org/10.1134/S1063783417120022· OSTI ID:22771666

Borisov, E. V.; Serov, A. Yu.; Filosofov, N. G. ^[1]

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1. St. Petersburg State University (Russian Federation)

A gallium nitride crystal 5 mm in thickness was grown by chloride–hydride vapor-phase epitaxy on a sapphire substrate, from which the crystal separated during cooling. At an early stage, a three-dimensional growth mode was implemented, followed by a switch to a two-dimensional mode. Spectra of exciton reflection, exciton luminescence, and Raman scattering are studied in several regions characteristic of the sample. Analysis of these spectra and comparison with previously obtained data for thin epitaxial GaN layers with a wide range of silicon doping enabled conclusions about the quality of the crystal lattice in these characteristic regions.

• OSTI ID: 22771666
• Journal Information: Physics of the Solid State, Journal Name: Physics of the Solid State Journal Issue: 12 Vol. 59; ISSN 1063-7834
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
DOPED MATERIALS
EXCITONS
GALLIUM NITRIDES
HYDRIDES
LAYERS
LUMINESCENCE
MONOCRYSTALS
OPTICAL PROPERTIES
RAMAN EFFECT
REFLECTION
SAPPHIRE
SILICON ADDITIONS
SPECTRA
SUBSTRATES
THICKNESS
THREE-DIMENSIONAL LATTICES
VAPOR PHASE EPITAXY