Hydride vapor phase epitaxy of gallium nitride films for quasi-bulk substrates

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:417647

Molnar, R J ^[1]; Goetz, W; Romano, L T; Johnson, N M ^[2]

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1. Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.
2. Xerox Palo Alto Research Center, CA (United States)

In this paper, the authors describe investigations of hydride vapor phase epitaxy (HVPE) for the growth of GaN thick films (up to 150 {micro}m) for use as substrates in subsequent III-V nitride-based device overgrowths. For 40 {micro}m thick films, dislocation densities as low as {approximately}5 {times} 10{sup 7} cm{sup {minus}2} have been attained without visible signs of thermally induced cracking. This defect density and crack-free thickness represent a substantial improvement over values typically observed for organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE) grown films. The electronic properties of these samples indicate minimal compensating defects. OMVPE and MBE epitaxial device overgrowths on these HVPE thick films replicate the defect structure of the underlying film, demonstrating that reduced defect densities can be obtained by utilizing an HVPE GaN buffer, compared to growth directly on sapphire by the conventional two-step growth techniques.

• Sponsoring Organization: Department of the Air Force, Washington, DC (United States)
• OSTI ID: 417647
• Report Number(s): CONF-960502--; ISBN 1-56677-163-3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
AMMONIA
DEEP LEVEL TRANSIENT SPECTROSCOPY
DISLOCATIONS
ELECTRICAL PROPERTIES
ELECTRON DIFFRACTION
ELECTRONIC EQUIPMENT
EXPERIMENTAL DATA
GALLIUM CHLORIDES
GALLIUM NITRIDES
MICROSTRUCTURE
PHOTOLUMINESCENCE
SAPPHIRE
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
TRANSMISSION ELECTRON MICROSCOPY
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION
ZINC OXIDES