Low-temperature deposition and characterization of Al{sub x}In{sub 1{minus}x}N thin films
- Univ. of Delaware, Newark, DE (United States)
Thin III-V nitride semiconductors films are commonly prepared using metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). These methods often require high temperatures (800--1,000 C) for the films to grow epitaxially. In the present work, the authors deposited Al{sub x}In{sub 1{minus}x}N films on Si substrates by reactive magnetron sputtering method at low substrate temperature. The properties of the films have been studied by RBS, x-ray diffraction, and optical measurements. The Al{sub x}In{sub 1{minus}x}N films deposited at room temperature were confirmed to be crystalline by x-ray diffraction. Band gap energies of the Al{sub x}In{sub 1{minus}x}N alloys varies from 1.9 eV to 4.2 eV. the bandgap energy vs. lattice constant curve was constructed and confirmed to bow downwards.
- OSTI ID:
- 581030
- Report Number(s):
- CONF-961202-; ISBN 1-55899-353-3; TRN: IM9807%%142
- Resource Relation:
- Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of III-V nitrides; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Moustakas, T.D. [ed.] [Boston Univ., MA (United States)]; Akasaki, I. [ed.] [Meijo Univ., Nagoya (Japan)]; Monemar, B.A. [ed.] [Linkoeping Univ. (Sweden)]; PB: 1278 p.; Materials Research Society symposium proceedings, Volume 449
- Country of Publication:
- United States
- Language:
- English
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