Trigonal hydrogen-related acceptor complexes in germanium
In germanium, an interstitial hydrogen atom may bind at a substitutional atom of carbon, silicon, beryllium, or zinc to form a shallow, monovalent acceptor complex. Photothermal ionization spectroscopy under uniaxial stress reveals that the complexes A(H,C), A(H,Si), A(Be,H), and A(Zn,H) have trigonal (C/sub 3//sub v/) symmetry. Each has two (1s)-like acceptor levels which shift, but do not split, under stress. In the fourfold basis for a GAMMA/sub 8/(T/sub d/) level, simultaneous diagonalization of the perturbations of applied stress, and of a trigonal lowering of symmetry, yields theoretical piezo- spectroscopic behavior in quantitative agreement with all available experimental data. This procedure has been extended to predict the stress-induced shifts of (1s)-like shallow acceptor levels associated with tetragonal (D/sub 2//sub d/) and rhombic-I (C/sub 2//sub v/) complexes in germanium, should these ever be observed experimentally. The four trigonal complexes in germanium are to be contrasted with A(Be,H) in silicon, in which the rapid tunneling of hydrogen leads to recovery of tetrahedral symmetry and a much more complicated energy-level structure.
- Research Organization:
- University of California and Lawrence Berkeley Laboratory, Berkeley, California 94720
- OSTI ID:
- 5797128
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 36:15; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
BINDING ENERGY
BOUND STATE
CARBON
CRYSTAL DEFECTS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY
FERMIONS
GERMANIUM
HYDROGEN
IMPURITIES
INTERSTITIALS
LEPTONS
METALS
NONMETALS
POINT DEFECTS
SEMIMETALS
SILICON
SPECTROSCOPY
STRESSES
TRIGONAL LATTICES
VALENCE
ZINC