A copper-related acceptor complex in vacuum grown germanium crystals

Journal Article · Mon Jan 01 04:00:00 EST 1996 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.360933· OSTI ID:253441

Sirmain, G ^[1]; Dubon, O D ^[1]; Hansen, W L ^[1]; Olsen, C S; Haller, E E ^[1]

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1. Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

A copper-related shallow acceptor complex has been discovered in germanium single crystals grown in vacuum and doped with arsenic and copper. Photothermal ionization spectroscopy of samples quenched from 673 K reveals two sets of hydrogenic lines with ground state binding energies of 9.15 and 10.05 meV. The line intensity ratios between corresponding transitions (1{ital s}-{ital np}) of the two hydrogenic series follow a Boltzmann dependence. This shows that the two series belong to the same impurity complex with a split ground state. Taking into account the crystal growth conditions together with the changes in the donor concentration deduced from variable temperature Hall effect measurements, we conclude that arsenic and substitutional copper form the new acceptor complex {ital A}(Cu{sub {ital s}},As) since copper is the only fast-diffusing species at this low annealing temperature. This complex is expected to have {ital C}{sub 3{ital v}} symmetry in agreement with preliminary piezospectroscopy measurements. {copyright} {ital 1996 American Institute of Physics.}

• Research Organization: Lawrence Berkeley National Laboratory
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 253441
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 79; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARSENIC ADDITIONS
COPPER
COPPER ADDITIONS
CRYSTAL DEFECTS
CRYSTAL GROWTH
CZOCHRALSKI METHOD
DOPED MATERIALS
ENERGY-LEVEL TRANSITIONS
GERMANIUM
IMPURITIES