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U.S. Department of Energy
Office of Scientific and Technical Information

Gallium arsenide thin films on tungsten/graphite substrates. Phase II. Quarterly project report No. 2, December 1, 1977-February 28, 1978

Technical Report ·
DOI:https://doi.org/10.2172/5779848· OSTI ID:5779848

The objectives of this contract are to investigate thin films of gallium arsenide on tungsten/graphite substrates and to prepare solar cells with an AM1 efficiency of 6% or higher by August 1978. Efforts during this quarter have been directed to: (1) the deposition and characterization of gallium arsenide films on tungsten/graphite substrates by the arsenic and arsine processes, (2) the construction and operation of an apparatus for the deposition of titanium dioxide films, and (3) the fabrication and evaluation of MOS solar cells on tungsten/graphite substrates. Gallium arsenide films have been deposited on tungsten/graphite substrates by the reaction of gallium, hydrogen chloride, and arsenic in a hydrogen flow. The structural and electrical properties of these films are very similar to those obtained by the arsine process. The initial stage of the deposition of gallium arsenide films on tungsten/graphite substrates has been investigated by the scanning electron microscopy.

Research Organization:
Southern Methodist Univ., Dallas, TX (USA)
DOE Contract Number:
AC03-76SF01284
OSTI ID:
5779848
Report Number(s):
DOE/SF/01284-T5; ON: DE81029449
Country of Publication:
United States
Language:
English