Gallium arsenide thin films on tungsten/graphite substrates. Phase II. Quarterly project report No. 2, December 1, 1977-February 28, 1978
The objectives of this contract are to investigate thin films of gallium arsenide on tungsten/graphite substrates and to prepare solar cells with an AM1 efficiency of 6% or higher by August 1978. Efforts during this quarter have been directed to: (1) the deposition and characterization of gallium arsenide films on tungsten/graphite substrates by the arsenic and arsine processes, (2) the construction and operation of an apparatus for the deposition of titanium dioxide films, and (3) the fabrication and evaluation of MOS solar cells on tungsten/graphite substrates. Gallium arsenide films have been deposited on tungsten/graphite substrates by the reaction of gallium, hydrogen chloride, and arsenic in a hydrogen flow. The structural and electrical properties of these films are very similar to those obtained by the arsine process. The initial stage of the deposition of gallium arsenide films on tungsten/graphite substrates has been investigated by the scanning electron microscopy.
- Research Organization:
- Southern Methodist Univ., Dallas, TX (USA)
- DOE Contract Number:
- AC03-76SF01284
- OSTI ID:
- 5779848
- Report Number(s):
- DOE/SF/01284-T5; ON: DE81029449
- Country of Publication:
- United States
- Language:
- English
Similar Records
Gallium arsenide thin films on tungsten/graphite substrates. Phase II
Gallium arsenide thin films on tungsten/graphite substrates. Phase II. Quarterly project report, March 1, 1978-May 31, 1978
Gallium arsenide thin films on tungsten/graphite substrates: Phase II. Final report, September 1, 1977 to November 30, 1978
Technical Report
·
Tue Feb 28 23:00:00 EST 1978
·
OSTI ID:6055606
Gallium arsenide thin films on tungsten/graphite substrates. Phase II. Quarterly project report, March 1, 1978-May 31, 1978
Technical Report
·
Thu Jun 01 00:00:00 EDT 1978
·
OSTI ID:6055597
Gallium arsenide thin films on tungsten/graphite substrates: Phase II. Final report, September 1, 1977 to November 30, 1978
Technical Report
·
Tue Oct 31 23:00:00 EST 1978
·
OSTI ID:5757878
Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANTIREFLECTION COATINGS
ARSENIC
ARSENIC COMPOUNDS
ARSENIDES
CARBON
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL REACTORS
CHEMICAL VAPOR DEPOSITION
COATINGS
DECOMPOSITION
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EQUIPMENT
FABRICATION
FILMS
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GRAPHITE
HYDROLYSIS
LYSIS
METALS
MOS SOLAR CELLS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE TESTING
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
REFRACTORY METALS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
SOLVOLYSIS
SUBSTRATES
SURFACE COATING
TESTING
TITANIUM COMPOUNDS
TITANIUM OXIDES
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANTIREFLECTION COATINGS
ARSENIC
ARSENIC COMPOUNDS
ARSENIDES
CARBON
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL REACTORS
CHEMICAL VAPOR DEPOSITION
COATINGS
DECOMPOSITION
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EQUIPMENT
FABRICATION
FILMS
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GRAPHITE
HYDROLYSIS
LYSIS
METALS
MOS SOLAR CELLS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE TESTING
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
REFRACTORY METALS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
SOLVOLYSIS
SUBSTRATES
SURFACE COATING
TESTING
TITANIUM COMPOUNDS
TITANIUM OXIDES
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN