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U.S. Department of Energy
Office of Scientific and Technical Information

Gallium arsenide thin films on tungsten/graphite substrates: Phase II. Final report, September 1, 1977 to November 30, 1978

Technical Report ·
DOI:https://doi.org/10.2172/5757878· OSTI ID:5757878

The objectives of this contract are to investigate thin films of gallium arsenide on low cost substrates and to prepare solar cells with an AM1 efficiency of 6% or higher by August 1978. Efforts during this year have been directed to (1) the deposition and characterization of gallium arsenide films on tungsten/graphite and graphite substrates, including the initial stage of the deposition process, (2) the effects of the addition of hydrogen chloride to the reactant mixture on the microstructure of gallium arsenide, (3) the deposition of titanium dioxide films as antireflection coatings, (4) the fabrication and characterization of gallium arsenide solar cells on tungsten/graphite and graphite substrates, and (5) the investigation of the temperature coefficients and stabilities of thin film gallium arsenide MOS solar cells. Results are reported. (WHK)

Research Organization:
Southern Methodist Univ., Dallas, TX (USA)
OSTI ID:
5757878
Report Number(s):
SAN-1284-T2
Country of Publication:
United States
Language:
English