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U.S. Department of Energy
Office of Scientific and Technical Information

Gallium arsenide thin films on tungsten/graphite substrates. Phase II. Quarterly project report, March 1, 1978-May 31, 1978

Technical Report ·
OSTI ID:6055597
Efforts during this quarter have been directed to (1) the effects of the nature of substrate on the initial stage of the deposition process, (2) the effects of the addition of hydrogen chloride to the reactant mixture, (3) the fabrication and characterization of thin film gallium arsenide solar cells on tungsten/graphite substrates with both gold and silver as barrier metals, and (4) the investigation of the temperature coefficients and stabilities of thin film gallium arsenide MOS solar cells. The use of the reaction between gallium, hydrogen chloride, and arsine in a hydrogen flow has been continued for the deposition of gallium arsenide. The initial stage of the deposition of gallium arsenide on graphite and carbon/graphite substrates and the effects of the addition of hydrogen chloride to the reactant mixture on the deposition of gallium arsenide on tungsten/graphite substrates have been investigated by scanning electron microscopy.
Research Organization:
Southern Methodist Univ., Dallas, TX (USA)
DOE Contract Number:
AC03-76SF01284
OSTI ID:
6055597
Report Number(s):
DOE/SF/01284-T8; ON: DE81027709
Country of Publication:
United States
Language:
English