Latch-up CMOS/EPI devices

Conference · Fri Nov 30 23:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

OSTI ID:5767754

Chapuis, T ^[1]; Erems, H C ^[2]; Rosier, L H ^[3]

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1. Centre National d'Etudes Spatiales, 18 Av. Edouard Belin, 31055 Toulouse Cedex (FR)
2. Z.I. Flourens, 31130 Balma (FR)
3. Inst. de Physique Nucleaire, BP 1-91406, Orsay Cedex (FR)

New space projects tend to use more and more VLSI circuits manufactured in CMOS technology. Assessment of latch-up sensitivity is mandatory in the evaluation plan of a component, and in some cases the result could be considered as a GO/NOGO parameter. The authors present data on several CMOS/EPI devices demonstrating the non-efficiency of an epitaxial layer to achieve latch-up immunity for some latest technologies.

• OSTI ID: 5767754
• Report Number(s): CONF-900723--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Vol. 37:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
EPITAXY
FILMS
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SENSITIVITY
THIN FILMS