SEU characterization and design dependence of the SA3300 microprocessor

Conference · Sat Dec 01 04:00:00 EST 1990 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)

DOI:https://doi.org/10.1109/23.101202· OSTI ID:5767746

Sexton, F W; Treece, R K; Hass, K J; Hash, G L; Axness, C L ^[1]; Hughes, K L ^[2]; Buchner, S P; Kang, K ^[3]

---

1. Sandia National Labs., Albuquerque, NM (USA)
2. L and M Associates, Albuquerque, NM (US)
3. Martin Marietta Labs., Baltimore, MD (USA)

The SEU vulnerability of the SA3300 16-bit microprocessor has been characterized, and the effects of two different design revisions on error rate have been explored. The authors have found that the threshold for upset depends on the data pattern written into the general purpose registers. With all bits in the general purpose registers set to logic one, a design with 2-{mu}m n- and p-channel transistor lengths had a threshold LET of 35 MeV-cm{sup 2}/mg at 25{degrees} C and 4.5 volt operation. With all zero's stored in the registers the upset threshold increased by more than a factor of two to 83 MeV- cm{sup 2}/mg. A second design revision, with 1.25-{mu}m and 1.75-{mu}m n- and p-channel transistor lengths, respectively, was more vulnerable to upset, but exhibited a smaller dependence on logic state.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5767746
• Report Number(s): CONF-900723--
• Conference Information: Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA) Journal Volume: 37:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPUTERS
DATA
DESIGN
ELECTRIC CONDUCTIVITY
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
ENERGY
EQUIPMENT
ERRORS
FEEDBACK
INFORMATION
LASERS
LOGIC CIRCUITS
MICROELECTRONIC CIRCUITS
MICROPROCESSORS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PULSES
RADIATION EFFECTS
RESISTORS
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
TEMPERATURE DEPENDENCE
THRESHOLD ENERGY
TRANSISTORS