InGaAs/InAlAs lattice-mismatched heterojunction insulated-gate field effect transistors grown on GaAs

Thesis/Dissertation · Mon Jan 01 04:00:00 EST 1990

OSTI ID:5762706

Chu, P

The heterojunction insulated-gate field effect transistor (HIGFET) was developed using lattice-mismatched InGaAs and InAlAs layers to demonstrate the effective utilization and advantages of strained layers. To increase the fractional In content in the device channel and therefore improve the device characteristics without giving up performance due to defects generated by a large lattice-mismatch with the GaAs substrate, it becomes necessary to interpose a buffer which can act as an artificial substrate for the channel, in essence decoupling the channel from the true substrate. In order to protect the channel and subsequently grown layers from propagating dislocations generated at the buffer/substrate interface, a strained layer superlattice lattice-matched to the new artificial lattice constant is inserted within the buffer to act as a dislocation filter.

• Research Organization: California Univ., San Diego, CA (USA)
• OSTI ID: 5762706
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
JUNCTIONS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
TRANSISTORS