Long-wavelength semiconductor devices, materials, and processes

Conference · Tue Jan 01 04:00:00 EST 1991

OSTI ID:5761084

Katz, A; Malik, R J ^[1]; Biefeld, R M ^[2]; Gunshor, R L ^[3]

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1. AT and T Bell Lab., Murray Hill, NJ (US)
2. Sandia National Lab., Albuquerque, NM (US)
3. Purdue Univ., West Lafayette, IN (US)

The symposium was directed as an overview of devices, materials and material processes having application for long-wavelength detectors and sources for fiber optics communication systems and thermal imaging. The aim of the symposium was to provide an appropriate forum for discussions on advanced III-V, II-VI, and IV-VI material processes for applications at wavelength above 1 {mu}m. More than 120 papers from 15 countries were presented on fundamental and applied aspects of long-wavelength semiconductor devices, materials, and processes. The symposium included sessions on overview and concerns of long- wavelength semiconductors; effects of quantum size in semiconductor structures; mercury cadmium telluride devices and processing; growth of mercury cadmium telluride; narrow- gap compounds; narrow gap (In, Ga)Sb III-V compounds; III-V based long-wavelength materials, processes and devices; and a large poster session.

• OSTI ID: 5761084
• Report Number(s): CONF-901105--; ISBN: 1-55899-108-5
• Country of Publication: United States
• Language: English

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42 ENGINEERING
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47 OTHER INSTRUMENTATION
ABSORPTION SPECTRA
ABSTRACTS
BACKSCATTERING
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
DOCUMENT TYPES
EFFICIENCY
FABRICATION
FIBER OPTICS
INFRARED THERMOGRAPHY
LEADING ABSTRACT
LIGHT EMITTING DIODES
MATERIALS TESTING
MEASURING METHODS
MEETINGS
MERCURY COMPOUNDS
MERCURY TELLURIDES
NONLINEAR OPTICS
OPTICS
PHOTODETECTORS
QUANTUM EFFICIENCY
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTRA
TELLURIDES
TELLURIUM COMPOUNDS
TESTING
THERMOGRAPHY
WAVELENGTHS