Proceedings of wide band gap semiconductors
Conference
·
OSTI ID:7201321
- Boston Univ., Boston, MA (US)
- Univ. of Colorado, Boulder, CO (US)
- Osaka Univ., Toyonaka, Osaka (JP)
This book contains the proceedings of wide band gap semiconductors. Wide band gap semiconductors are under intense study because of their potential applications in photonic devices in the visible and ultraviolet part of the electromagnetic spectrum, and devices for high temperature, high frequency and high power electronics. Additionally, due to their unique mechanical, thermal, optical, chemical, and electronic properties many wide band gap semiconductors are anticipated to find applications in thermoelectric, electrooptic, piezoelectric and acoustooptic devices as well as protective coatings, hard coatings and heat sinks. Material systems covered in this symposium include diamond, II-VI compounds, III-V nitrides, silicon carbide, boron compounds, amorphous and microcrystalline semiconductors, chalcopyrites, oxides and halides. The various papers addressed recent experimental and theoretical developments. They covered issues related to crystal growth (bulk and thin films), structure and microstructure, defects, doping, optoelectronic properties and device applications. A theoretical session was dedicated to identifying common themes in the heteroepitaxy and the role of defects in doping, compensation and phase stability of this unique class of materials. Important experimental milestones included the demonstrations of bright blue injection luminescence at room temperatures from junctions based on III-V nitrides and a similar result from multiple quantum wells in a ZnSe double heterojunction at liquid nitrogen temperatures.
- OSTI ID:
- 7201321
- Report Number(s):
- CONF-911202--; ISBN: 1-55899-136-0
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
360606* -- Other Materials-- Physical Properties-- (1992-)
664200 -- Spectra of Atoms & Molecules & their Interactions with Photons-- (1992-)
665300 -- Interactions Between Beams & Condensed Matter-- (1992-)
74 ATOMIC AND MOLECULAR PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSTRACTS
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
BACKSCATTERING
BERYLLIUM ADDITIONS
BERYLLIUM ALLOYS
BORON ADDITIONS
BORON ALLOYS
BULK DENSITY
CHALCOGENIDES
CRYSTAL GROWTH METHODS
DENSITY
DOCUMENT TYPES
ELECTRONIC STRUCTURE
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INORGANIC PHOSPHORS
JUNCTIONS
LEADING ABSTRACT
LUMINESCENCE
MATERIALS
MEETINGS
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHASE STABILITY
PHOSPHORS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SPUTTERING
STABILITY
SULFIDES
SULFUR COMPOUNDS
THIN FILMS
ZINC COMPOUNDS
ZINC SULFIDES
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
360606* -- Other Materials-- Physical Properties-- (1992-)
664200 -- Spectra of Atoms & Molecules & their Interactions with Photons-- (1992-)
665300 -- Interactions Between Beams & Condensed Matter-- (1992-)
74 ATOMIC AND MOLECULAR PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSTRACTS
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
BACKSCATTERING
BERYLLIUM ADDITIONS
BERYLLIUM ALLOYS
BORON ADDITIONS
BORON ALLOYS
BULK DENSITY
CHALCOGENIDES
CRYSTAL GROWTH METHODS
DENSITY
DOCUMENT TYPES
ELECTRONIC STRUCTURE
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INORGANIC PHOSPHORS
JUNCTIONS
LEADING ABSTRACT
LUMINESCENCE
MATERIALS
MEETINGS
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHASE STABILITY
PHOSPHORS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SPUTTERING
STABILITY
SULFIDES
SULFUR COMPOUNDS
THIN FILMS
ZINC COMPOUNDS
ZINC SULFIDES