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Physics and Applications of the Lock-on Effect [Book Chapter]

Conference · · Eighth IEEE International Conference on Pulsed Power
 [1];  [1];  [1];  [1];  [1];  [2]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
  2. Army Research Laboratory, Monmouth, NJ (United States). Devices Laboratory LABCOM
+ Show Author Affiliations

The lock-on effect is a high gain, high field switching mechanism that has been observed in GaAs and InP. This switching mode is exciting because the amount of light required to trigger it is small when compared to triggering the same switch at low fields. For this reason we can use laser diode arrays to trigger high voltages, currents and power. This paper will describe the lock-on effect, and our recent experiments to understand the effect. We will show that impact ionization from deep levels cannot account for the observed current densities, delays, and rise times unless a second mechanism is invoked. We will also describe our applications for laser diode array triggered lock-on switches, the best results that illustrate our potential for the application, and the studies carried out to improve the lifetime and current carrying capability of the switches.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE; US Army Research Office (ARO)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5759296
Report Number(s):
SAND--90-3072C; CONF-910640--11; ON: DE91014670; ISBN: 0-7803-0177-3
Journal Information:
Eighth IEEE International Conference on Pulsed Power, Journal Name: Eighth IEEE International Conference on Pulsed Power
Publisher:
IEEE
Country of Publication:
United States
Language:
English

References (7)

Characteristics of GaAs with inverted thermal conversion journal October 1987
High current photoconductive semiconductor switches conference August 2002
Inverted thermal conversion—GaAs, a new alternative material for integrated circuits journal October 1986
GaAs opto-thyristor for pulsed power applications conference January 1990
Triggering GaAs lock-on switches with laser diode arrays journal April 1991
Optical characterization of semi-insulating GaAs: Determination of the Fermi energy, the concentration of the midgap EL2 level and its occupancy journal August 1987
Recovery of high-field GaAs photoconductive semiconductor switches journal April 1991

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Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
ARSENIC COMPOUNDS
ARSENIDES
ELECTRIC FIELDS
ELECTRICAL EQUIPMENT
ELECTRON MICROSCOPY
ELECTRONIC CIRCUITS
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
MICROSCOPY
MODE LOCKING
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PULSE CIRCUITS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMICONDUCTOR SWITCHES
SOLID STATE LASERS
SWITCHES
TRIGGER CIRCUITS