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U.S. Department of Energy
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Cadmium sulfide/copper ternary heterojunction cell research. Quarterly technical progress report, April 1-June 30, 1978

Technical Report ·
OSTI ID:5757870

The objective of this research program is the development of a thin-film photovoltaic solar cell based upon a cadmium sulfide/copper ternary compound heterojunction materials system. The ternary material is chalcopyrite CuInSe/sub 2/ formed by simultaneous elemental evaporation. The research effort has concerned the preparation and characterization of CuInSe/sub 2/ and CdS films and the fabrication and testing of 1 cm/sup 2/ area CdS/CuInSe/sub 2/ heterojunction thin-film devices. A modification to the vapor beam homogenization chamber structure used to deposit the selenide films is described. The successful modification was made to prolong the operational lifetime of the chamber without sacrificing deposited film uniformity. Grain size of CuInSe/sub 2/ is reported to be small (approx. 0.5 ..mu..m) even for films subjected to relatively high processing temperatures. Doping the CdS film during growth with indium is described as an effective means for reducing the CdS resistivity and this contribution to the cell series resistance. Measurements are given indicating resistivities as low as 0.003 ..cap omega..-cm. I-V curves for fabricated cells are presented showing two types of cell behavior. Type 1 has high open circuit voltages and low short circuit currents while Type 2 possesses the reverse characteristics. Maximum values are given as 0.33 V, 23 mA/cm/sup 2/, and 2% efficiency under simulated 100 mW/cm/sup 2/ illumination.

Research Organization:
Boeing Aerospace Co., Seattle, WA (USA)
OSTI ID:
5757870
Report Number(s):
SAN-1458-3
Country of Publication:
United States
Language:
English