Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

Journal Article · Fri Feb 28 23:00:00 EST 1997 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.53289· OSTI ID:575620

Wang, C A; Choi, H K; Turner, G W; Spears, D L; Manfra, M J ^[1]; Charache, G W ^[2]

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1. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173-9108 (United States)
2. Lockheed Martin, Inc., Schenectady, New York 12301 (United States)

The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2{endash}2.4 {mu}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched TPV devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses, and some with the incorporation of a high-bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency and open circuit voltage is observed for devices with an AlGaAsSb window layer compared to those without one. {copyright} {ital 1997 American Institute of Physics.}

• Sponsoring Organization: USDOE
• OSTI ID: 575620
• Report Number(s): CONF-9705119--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 401; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

30 DIRECT ENERGY CONVERSION
36 MATERIALS SCIENCE
CARRIER DENSITY
CARRIER MOBILITY
CRYSTAL DOPING
FABRICATION
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM EFFICIENCY
SEMICONDUCTOR MATERIALS
THERMOPHOTOVOLTAIC CONVERTERS
VAPOR PHASE EPITAXY