Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices
- Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.
- Lockheed Martin, Inc., Schenectady, NY (United States)
The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.
- Research Organization:
- Knolls Atomic Power Lab., Schenectady, NY (United States)
- Sponsoring Organization:
- USDOE Assistant Secretary for Nuclear Energy, Washington, DC (United States)
- DOE Contract Number:
- AC12-76SN00052
- OSTI ID:
- 325753
- Report Number(s):
- KAPL-P--000176; K--97063; CONF-9705119--; ON: DE99001954
- Country of Publication:
- United States
- Language:
- English
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