Low temperature (150-250/sup 0/C) deposition of n/sup +/ and p/sup +/ microcrystalline silicon for VLSI device contacts

Journal Article · Sun Jan 01 04:00:00 EST 1984 · Mater. Res. Soc. Symp. Proc.; (United States)

OSTI ID:5754703

Rajeswaran, G; Vanier, P E; Kampas, F J; Corderman, R R

The rf glow discharge decomposition of dilute mixtures (approx.1%) of SiH/sub 4/ in H/sub 2/, with suitable doping agents such as PH/sub 3/ or B/sub 2/H/sub 6/ added, produces n/sup +/ and p/sup +/ microcrystalline (..mu..c) silicon films with resistivities (Rho) in the 10/sup -1/ ..omega.. cm range at exceedingly low substrate temperatures T/sub s/ (150-250/sup 0/C). The ..mu..c-Si films consist of two phases with crystalline clusters embedded in an amorphous matrix. The films are stable when temperature-cycled in the 30-400/sup 0/C range and the resistivity decreases when annealed above the original deposition temperature. A model of microcrystalline film growth involving the reactions between the gas phase radicals and the growing film surface is proposed. 11 references, 4 figures, 1 table.

• Research Organization: Brookhaven National Lab., Upton
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 5754703
• Journal Information: Mater. Res. Soc. Symp. Proc.; (United States), Journal Name: Mater. Res. Soc. Symp. Proc.; (United States) Vol. 25; ISSN MRSPD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
CRYSTALS
DEPOSITION
DOPED MATERIALS
ELECTRIC DISCHARGES
ELEMENTS
GLOW DISCHARGES
MATERIALS
POLYCRYSTALS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE