Crystallinity, morphology, and conductivity of boron-doped microcrystal-line silicon

Journal Article · Sun Jan 01 04:00:00 EST 1984 · Mater. Res. Soc. Symp. Proc.; (United States)

OSTI ID:5576416

Rajeswaran, G; Tafto, J; Sabatini, R L; Vanier, P E

Boron-doped microcrystalline (..mu..c) silicon films produced by rf glow discharge from dilute (1%) mixtures of SiH/sub 4/ in H/sub 2/ show a critical dependence of conductivity on deposition conditions. The dark conductivity was related to the microscopic features using electron microscopy. The ..mu..c-Si:H films contain clusters of crystallites embedded in an amorphous matrix. The size of the crystalline clusters is typically 0.2 ..mu..m in diameter, and the size of the individual crystallites is about 2.5 nm. Electron micrographs of samples prepared at substrate temperatures T/sub s/ = 135/sup 0/C, 150/sup 0/C, 165/sup 0/C, and 180/sup 0/C show that the number of crystalline clusters increases with T/sub s/ up to 165/sup 0/C. At T/sub s/ = 180/sup 0/C, the crystallites completely disappear. When the concentration of SiH/sub 4/ in H/sub 2/ is decreased to 0.25%, the microstructure shows a high density of crystallites with no apparent clustering. 6 references, 7 figures.

• Research Organization: Brookhaven National Lab., Upton, NY
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 5576416
• Journal Information: Mater. Res. Soc. Symp. Proc.; (United States), Journal Name: Mater. Res. Soc. Symp. Proc.; (United States) Vol. 31; ISSN MRSPD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ALLOYS
BORON ADDITIONS
BORON ALLOYS
CRYSTAL DOPING
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
HIGH TEMPERATURE
MICROSTRUCTURE
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
THIN FILMS