Low temperature (150 to 250/sup 0/C) deposition of n/sup +/ and p/sup +/ microcrystalline silicon for VLSI device contacts

Conference · Fri Dec 31 23:00:00 EST 1982

OSTI ID:5336007

Rajeswaran, G; Vanier, P E; Kampas, F J; Corderman, R R

The rf glow discharge decomposition of dilute mixtures (approx. 1%) of SiH/sub 4/ in H/sub 2/, with suitable doping agents such as PH/sub 3/ or B/sub 2/H/sub 6/ added, produces n/sup +/ and p/sup +/ microcrystalline (..mu..c) silicon films with resistivities (rho) in the 10/sup -1/ OMEGA.cm range at exceedingly low substrate temperatures T/sub s/ (150 to 250/sup 0/C). The ..mu..c-Si films consist of two phases with crystalline clusters embedded in an amorphous matrix. The films are stable when temperature-cycled in the 30 to 400/sup 0/C range and the resistivity decreases when annealed above the original deposition temperature. A model of microcrystalline film growth involving the reactions between the gas phase radicals and the growing film surface is proposed.

• Research Organization: Brookhaven National Lab., Upton, NY (USA)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 5336007
• Report Number(s): BNL-34122; CONF-831174-72; ON: DE84006474
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
CRYSTAL DOPING
DEPOSITION
ELECTRIC DISCHARGES
ELEMENTS
FILMS
GLOW DISCHARGES
HYDRIDES
HYDROGEN
HYDROGEN COMPOUNDS
NONMETALS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
THERMAL CYCLING