Surface solidification and impurity segregation in amorphous silicon

Journal Article · Mon Jun 16 04:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96843· OSTI ID:5754666

Peercy, P S; Poate, J M; Thompson, M O; Tsao, J Y

Real-time measurements of the melt and solidification dynamics during pulsed laser irradiation have permitted elucidation of the processes which lead to the formation of very thin (approx.2 nm) buried impurity layers in amorphous silicon. These novel structures are found to result from interfacial segregation at two moving liquid silicon-amorphous silicon interfaces: one propagating toward the surface and the other propagating from the surface inward. The velocities of these interfaces are found to be remarkably low, ranging from 1 to 8 m/s for melts of <20 ns duration.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5754666
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:24; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure &amp; Phase Studies
AMORPHOUS STATE
ELEMENTS
HEATING
INTERFACES
LASER-RADIATION HEATING
MELTING
PHASE TRANSFORMATIONS
PLASMA HEATING
SEGREGATION
SEMIMETALS
SILICON
SOLIDIFICATION