Anomalous behavior during the solidification of silicon in the presence of impurities
Conference
·
OSTI ID:6084551
Nanosecond pulsed laser irradiation of silicon results in the melting of the surface with subsequent solidification from a crystalline substrate. In the presence of impurities or alloys, the solidification dynamics are greatly affected by the nature of the impurities. Five classes of materials have been investigated: amorphous Si, mutually soluble alloys, high solubility impurities, low solubility impurities, and compound forming materials. Solidification of each of these classes of materials is discussed. Several anomalous kinetic regimes are observed, including explosive crystallization, surface nucleation of solid, and internal nucleation of melt. These results are interpreted in terms of thermodynamic modifications of the melting temperature in the alloy regions.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA); Cornell Univ., Ithaca, NY (USA). Dept. of Materials Science
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6084551
- Report Number(s):
- SAND-85-1405C; CONF-851217-53; ON: DE86007395
- Country of Publication:
- United States
- Language:
- English
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