Kinetics of solid-state reactions in Ni-Zr thin films

Conference · Tue Jan 01 04:00:00 EST 1991

DOI:https://doi.org/10.1557/PROC-230-15· OSTI ID:5747198

Schwarz, R B; Rubin, J B

We have studied the kinetic of the solid-state amorphizing reaction in thin film multilayers of Ni and Zr. Crystalline Ni and Zr films were deposited in ultra-high vacuum onto platinum resistance thermometer embedded in alumina. An electronic feedback circuit controls the temperature of the substrata by adjusting the power dissipated by the platinum resistors. We find that structural relaxation in the as-deposited Ni and Zr films affects the initial stages of the reaction. For long reaction times there is a discontinuous change in the reaction rate. The time to reach this transition increases with film thickness and depends exponentially on 1/T, with an apparent activation energy of 3 eV atom{sup {minus}1}. 25 refs., 9 figs.

• Research Organization: Los Alamos National Lab., NM (USA)
• Sponsoring Organization: DOE; USDOE, Washington, DC (USA)
• DOE Contract Number: W-7405-ENG-36
• OSTI ID: 5747198
• Report Number(s): LA-UR-91-1488; CONF-910406--16; ON: DE91013652
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400201* -- Chemical & Physicochemical Properties
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
AMORPHOUS STATE
CHALCOGENIDES
CHEMICAL REACTIONS
ELEMENTS
FILMS
LAYERS
MEASURING INSTRUMENTS
METALS
NICKEL
OXIDES
OXYGEN COMPOUNDS
THERMOMETERS
THIN FILMS
TRANSITION ELEMENTS
ZIRCONIUM