Kinetics of the solid-state amorphizing reaction in thin films studied by electrical resistivity

Journal Article · Mon Jul 03 04:00:00 EDT 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.101747· OSTI ID:6095662

Rubin, J B; Schwarz, R B

We deposited Ni-Zr thin-film multilayers by electron beam evaporation onto polished alumina substrates. The multilayers were annealed at a constant heating rate, and /ital in/ /ital situ/ resistance measurements made to derive the growth kinetics of amorphous NiZr alloy at the Ni/Zr interfaces. Using a simple model that relates resistance change to amorphous-layer thickness, we derive the apparent diffusivity of nickel in amorphous Ni/sub 50/Zr/sub 50/, /ital D//sub Ni/ =2.5/times/10/sup /minus/5/ exp(/minus/1.01(/ital eV/)//ital kT/) cm/sup 2/ s/sup /minus/1/.

• Research Organization: Center for Materials Science and MST-7, Los Alamos National Laboratory, Mail Stop K 765, Los Alamos, New Mexico 87545(US)
• OSTI ID: 6095662
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 55:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
ALLOYS
AMORPHOUS STATE
ATOM TRANSPORT
CHEMICAL REACTIONS
DIFFUSION
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
KINETICS
METALS
NEUTRAL-PARTICLE TRANSPORT
NICKEL
NICKEL ALLOYS
PHYSICAL PROPERTIES
RADIATION TRANSPORT
SYNTHESIS
THICKNESS
THIN FILMS
TRANSITION ELEMENTS
ZIRCONIUM
ZIRCONIUM ALLOYS