Dry etching method and device therefor

Patent · Tue Jan 08 00:00:00 EST 1985

OSTI ID:5740201

Okano, H; Horiike, Y

A dry etching method and device involve induction of a magnetic field having field lines perpendicular to an electric field by magnets which are arranged in the vicinity of a cathode within a reaction chamber, on the surface of the cathode being placed a sample to be etched by a plasma of an etchant gas.

• Assignee: Tokyo Shibaura Denki Kabushiki Kaisha (Japan)
• Patent Number(s): US 4492610
• OSTI ID: 5740201
• Resource Relation: Patent Priority Date: Priority date 12 Dec 1983, Japan; Other Information: PAT-APPL-559857
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM
ETCHING
INTEGRATED CIRCUITS
FABRICATION
ION SOURCES
SILICON
SILICON OXIDES
CARBON FLUORIDES
CATHODES
GAS FLOW
MAGNETIC FIELDS
MAGNETS
PLASMA
SEMICONDUCTOR DEVICES
THIN FILMS
CARBON COMPOUNDS
CHALCOGENIDES
ELECTRODES
ELECTRONIC CIRCUITS
ELEMENTS
FILMS
FLUID FLOW
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
METALS
MICROELECTRONIC CIRCUITS
OXIDES
OXYGEN COMPOUNDS
SEMIMETALS
SILICON COMPOUNDS
SURFACE FINISHING
360601* - Other Materials- Preparation & Manufacture
420800 - Engineering- Electronic Circuits & Devices- (-1989)