Methods for dry etching semiconductor devices

Bauer, Todd; Gross, Andrew John; Clews, Peggy J.; Olsson, Roy H.

Methods for dry etching semiconductor devices

Patent · Tue Nov 01 04:00:00 EDT 2016

OSTI ID:1330708

Bauer, Todd; Gross, Andrew John; Clews, Peggy J.; Olsson, Roy H.

The present invention provides methods for etching semiconductor devices, such aluminum nitride resonators. The methods herein allow for devices having improved etch profiles, such that nearly vertical sidewalls can be obtained. In some examples, the method employs a dry etch step with a primary etchant gas that omits BCl.sub.3, a common additive.

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Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: 9,484,216

Application Number:: 14/728,810

OSTI ID:: 1330708

Country of Publication:: United States

Language:: English

References (26)

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