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Title: Method for dry etching of transition metals

Abstract

A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.

Inventors:
 [1];  [2];  [2];  [2];  [3];  [2]
  1. (Edgewood, NM)
  2. (Albuquerque, NM)
  3. (Tijeras, NM)
Publication Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
871865
Patent Number(s):
US 5814238
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; dry; etching; transition; metals; metal; alloy; silicide; substrate; comprises; providing; nitrogen-; phosphorous-containing; -acceptor; ligand; proximity; form; volatile; complex; performed; plasma; reactive; rie; downstream; afterglow; chemically-assisted; beam; caibe; generating; ligands; directly; source; gas; nitrosyl; generated; nitric; oxide; contact; energized; particles; photons; electrons; atoms; molecules; preferred; embodiments; intermediary; reactant; species; carbonyl; halide; initial; chemical; reaction; replaced; forming; substrate comprises; plasma etching; dry etching; comprises providing; preferred embodiments; transition metals; preferred embodiment; transition metal; chemical reaction; metal alloy; nitric oxide; plasma etch; reactant species; source gas; beam etching; ligand complex; /216/438/

Citation Formats

Ashby, Carol I. H., Baca, Albert G., Esherick, Peter, Parmeter, John E., Rieger, Dennis J., and Shul, Randy J.. Method for dry etching of transition metals. United States: N. p., 1998. Web.
Ashby, Carol I. H., Baca, Albert G., Esherick, Peter, Parmeter, John E., Rieger, Dennis J., & Shul, Randy J.. Method for dry etching of transition metals. United States.
Ashby, Carol I. H., Baca, Albert G., Esherick, Peter, Parmeter, John E., Rieger, Dennis J., and Shul, Randy J.. Thu . "Method for dry etching of transition metals". United States. doi:. https://www.osti.gov/servlets/purl/871865.
@article{osti_871865,
title = {Method for dry etching of transition metals},
author = {Ashby, Carol I. H. and Baca, Albert G. and Esherick, Peter and Parmeter, John E. and Rieger, Dennis J. and Shul, Randy J.},
abstractNote = {A method for dry etching of transition metals. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/.pi.-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The dry etching may also be performed by generating the .pi.-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the .pi.-acceptor ligand for forming the volatile transition metal/.pi.-acceptor ligand complex.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1998},
month = {Thu Jan 01 00:00:00 EST 1998}
}

Patent:

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  • A method for dry etching of transition metals is disclosed. The method for dry etching of a transition metal (or a transition metal alloy such as a silicide) on a substrate comprises providing at least one nitrogen- or phosphorus-containing {pi}-acceptor ligand in proximity to the transition metal, and etching the transition metal to form a volatile transition metal/{pi}-acceptor ligand complex. The dry etching may be performed in a plasma etching system such as a reactive ion etching (RIE) system, a downstream plasma etching system (i.e. a plasma afterglow), a chemically-assisted ion beam etching (CAIBE) system or the like. The drymore » etching may also be performed by generating the {pi}-acceptor ligands directly from a ligand source gas (e.g. nitrosyl ligands generated from nitric oxide), or from contact with energized particles such as photons, electrons, ions, atoms, or molecules. In some preferred embodiments of the present invention, an intermediary reactant species such as carbonyl or a halide ligand is used for an initial chemical reaction with the transition metal, with the intermediary reactant species being replaced at least in part by the {pi}-acceptor ligand for forming the volatile transition metal/{pi}-acceptor ligand complex.« less
  • A dry etching method is disclosed. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators. 1 fig.
  • A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.
  • A dry etching method and device involve induction of a magnetic field having field lines perpendicular to an electric field by magnets which are arranged in the vicinity of a cathode within a reaction chamber, on the surface of the cathode being placed a sample to be etched by a plasma of an etchant gas.
  • A dry etching method for organic material layers is disclosed which utilizes a parallel plate electrode type plasma etching apparatus. An etching gas containing nitrogen as its primary constituent is introduced into the apparatus, and then the organic material layers are anisotropically etched by applying a high frequency electric power to the electrodes to produce a plasma.