Evaluation of imprint in fully integrated (La,Sr)CoO{sub 3}/Pb(Nb,Zr,Ti)O{sub 3}/(La,Sr)CoO{sub 3} ferroelectric capacitors

Journal Article · Sun Feb 01 04:00:00 EST 1998 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.366954· OSTI ID:573945

Sadashivan, S; Aggarwal, S; Song, T K; Ramesh, R ^[1]; Evans, Jr, J T ^[2]; Tuttle, B A; Warren, W L; Dimos, D ^[3]

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1. Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742 (United States)
2. Radiant Technologies, Albuquerque, New Mexico 87106 (United States)
3. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

We have investigated the imprint characteristics of fully integrated ferroelectric lead zirconate titanate based capacitors. These capacitors were fabricated using conducting perovskite La{endash}Sr{endash}Co{endash}O electrodes. We have specifically focused on the effect of several test and capacitor variables, including temperature, unipolar stress amplitude, number of cycles, and device area. Two different figures of merit, one based on coercive voltage changes and the other based on differences in polarization values were used to quantify imprint. The imprint in our capacitors showed a small temperature dependence over the range that we have studied. The unidirectional pulse voltage amplitude had a larger influence on the imprint. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 573945
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 83; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITORS
COBALT OXIDES
ELECTRODES
FERROELECTRIC MATERIALS
INTEGRATED CIRCUITS
LANTHANUM COMPOUNDS
LANTHANUM OXIDES
LEAD COMPOUNDS
MEMORY DEVICES
NIOBIUM OXIDES
PZT
STRONTIUM COMPOUNDS
STRONTIUM OXIDES
TEMPERATURE DEPENDENCE
THIN FILMS