Control of epitaxial growth for SrBi{sub 2}Ta{sub 2}O{sub 9} thin films

Journal Article · Sun Feb 01 04:00:00 EST 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.120840· OSTI ID:573929

Cho, J H; Bang, S H; Son, J Y ^[1]; Jia, Q X ^[2]

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1. RCDAMP and Department of Physics, Pusan National University, Pusan609-735 (Korea)
2. Superconductivity Technology Center, MS K763, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

We report the (a00) oriented as well as the (00l) oriented epitaxial SrBi{sub 2}Ta{sub 2}O{sub 9} thin film grown on (100) LaAlO{sub 3} and (200) yttria-stabilized zirconia single crystal substrates. On (100) SrTiO{sub 3} single crystal substrate, we only observe the (00l) oriented epitaxial growth of SrBi{sub 2}Ta{sub 2}O{sub 9} thin film. We infer that the (a00) oriented epitaxial growth results from the strain by the lattice mismatch. The band gaps of the (00l) and the (a00) oriented SrBi{sub 2}Ta{sub 2}O{sub 9} films are {approximately}3.9 and {approximately}3.5 eV, respectively. The two epitaxial orientations of ferroelectric SrBi{sub 2}Ta{sub 2}O{sub 9} thin film can provide an opportunity to study the effects on microwave and optical waveguides as well as underlying anisotropic physical properties. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 573929
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 72; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM OXIDES
BISMUTH COMPOUNDS
ENERGY GAP
EPITAXY
FERROELECTRIC MATERIALS
STRAINS
STRONTIUM COMPOUNDS
STRONTIUM OXIDES
TANTALUM OXIDES
THIN FILMS
WAVEGUIDES