Improved transient ionizing-radiation survivability of n-channel power MOSFETs

Conference · Wed Jan 01 00:00:00 EST 1986

OSTI ID:5737042

Dawes, Jr, W R; Fischer, T A; Huang, C C.C.; Meyer, W J; Smith, C S; Blanchard, R A; Fortier, T J

Substantial improvements have been made in the fabrication of medium-power, n-channel MOSFETs permitting operation at dose rates up to 1 x 10/sup 12/ rad(Si)/s. The physical mechanisms responsible for power MOSFET burnout are discussed along with the fabrication techniques used in the improved designs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA); MA/COM PHI, Inc., Torrance, CA (USA); Siliconix, Inc., Santa Clara, CA (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5737042
• Report Number(s): SAND-86-0448C; CONF-860706-11; ON: DE86007700
• Resource Relation: Conference: 23. annual conference on nuclear and space radiation effects, Providence, RI, USA, 20 Jul 1986; Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
MOSFET
PHYSICAL RADIATION EFFECTS
DESIGN
FABRICATION
PHOTOCURRENTS
SILICON
CURRENTS
ELECTRIC CURRENTS
ELEMENTS
FIELD EFFECT TRANSISTORS
MOS TRANSISTORS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
420800 - Engineering- Electronic Circuits & Devices- (-1989)