Power MOSFET usage in radiation environments: circuit design techniques and improved fabrication methods

Conference · Wed Jan 01 00:00:00 EST 1986

OSTI ID:5236395

Fischer, T A; Dawes, Jr, W R; Huang, C C-C; Blanchard, R A; Fortier, T J; Meyer, W J; Smith, C S; Yoon, S

This paper will discuss circuit design techniques which will permit the use of commercial power MOSFETs in severe transient ionizing radiation environments. In addition, new MOSFET fabrication techniques will be discussed for devices which have survived exposures up to 1 x 10/sup 12/ rad(Si)/s.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA); Siliconix, Inc., Santa Clara, CA (USA); MA/COM PHI, Inc., Torrance, CA (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5236395
• Report Number(s): SAND-86-0683C; CONF-861116-1; ON: DE86009029
• Resource Relation: Conference: Supercomputers: electronics for the 90's, San Diego, CA, USA, 11 Nov 1986
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
MOSFET
PHYSICAL RADIATION EFFECTS
DESIGN
ELECTRONIC CIRCUITS
FABRICATION
FIELD EFFECT TRANSISTORS
MOS TRANSISTORS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
420800 - Engineering- Electronic Circuits & Devices- (-1989)